Joint-stock company "microelectronic sensors and devices" (abbreviation midaus) develops and manufactures microelectronic pressure transducers and transmitters as well as related devices.

The development of microelectronic pressure transducers is based on profound original investigations of piezoresistive effect in heteroepitaxial semiconductor structures silicon-on-sapphire (sos) carried out in russia in 70-80ies. The main aspects of sos use in measurement of mechanical parameters (pressure, force, acceleration, etc) were patented in ussr, USA, france and germany. The new developments of design, electronics and technology made in jjsc midaus are directed on further enhancement of pressure measurement devices based on sos, improving accuracy and stability of pressure sensors and their mass and size reduction.

The first product of jv midaus produced in 1991 was a family of industrial gage pressure transmitters mida-gp-01 with pressure ranges from 0. 16 mpa to 160 mpa, accuracy of 0. 5 and 1. 0% fs and operating temperature range-40 80 deg c. The production was based on cooperation with other plants. Presently jsc midaus produces all the products on its own technological base. Jsc midaus produces about thirty types of industrial and special pressure transmitters and over ten types of pressure transducers for measurement of gage, absolute, differential pressure and vacuum; the overall number of different modifications exceeds twelve thousands with pressure ranges from 4 kpa to 160 mpa, accuracy from 0. 1 to 0. 5% fs and operating temperature range from-60 to 500 deg c. We also produce pressure transmitters for hazardous processes (intrinsic-safe and explosion-proof versions) .

The pressure transmitters mida are approved by russian standard authorities; they have hazardous-safe certificates and are certified for use at atomic power stations and on board of ships.

Jsc midaus also cooperates with other pressure sensors manufacturers. We have developed special pres