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Silicon Epitaxial Wafer 1
  • Silicon Epitaxial Wafer 1

Silicon Epitaxial Wafer

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Origin:Made In China
Category:Electronics & Electricity / Other Electrical & Electronic
Label:silicon epitaxial wa , silicon epitaxy , SiGe epitaxial wafer
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Epitaxy is the process of depositing a thin layer on substrate, Epitaxy layer can be as the same as the basis(Si/Si) or different with the basis (SiGe/Si or SiC/S) ,Silicon epitaxy is a layer of single-crystal silicon on wafer,The epitaxial layer can be doped, as it is deposited, to the precise doping concentration while continuing the substrate's crystalline structure.
 
We can offer Silicon epitaxial wafer and SiGe Epitaxial Wafer,diameter from 4” to 8” . Wafer Type: Blanket Epitaxial Wafer, Patterned Epitaxial Wafer with Burried Layer. Application: Bipolar device, Power   MOSFET,IGBT,Detectors and rectifier, IC and As-doped substrate.

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Xiamen Powerway Advanced Material Co., Ltd

tongji building,huli developing zone,xiamen

Phone:
86-592-5601404
Fax:
86
Contact:
victor (business manager)
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