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Dimension Tolerance

(W±0.1mm) ×(H±0.1mm) ×(L+0.5/-0.1mm) (L≥2.5mm)
(W±0.1mm) ×(H±0.1mm) ×(L+0.1/-0.1mm) (L<2.5mm)

Angle Tolerance

Δθ ≤ 0.25° Δφ ≤ 0.25°

Clear Aperture

90% of central area

Chamfer

≤ 0.2mm @45°

Chip

≤ 0.1mm

Damage Threshold
[GW/cm2 ]

> 1 TEM00, 10ns, 10HZ (uncoated)
> 0.5 for 1064nm, TEM00, 10ns, 10HZ (AR-coated)
> 0.3 for 532nm, TEM00, 10ns, 10HZ (AR-coated)

Flatness

< λ/8 @ 633nm

Parallelism

< 20"

Perpendicularity

≤ 5'

Surface Quality [S/D]

< 10/5

Wavefront Distortion

< λ/8 @ 633nm

Interior Quality

No visible scattering paths or centers [inspected by 50mW green laser]

Transparency Range

190nm-3500nm

SHG Phase Matchable Range

409.nm6-350 nm (Type I); 525nm-3500nm (Type II)

Therm-optic Coefficients [K-1]

dno/dT=-16.6×10-6; dne/dT=-9.3×10-6

Absorption Coefficients

<0.1%/cm @1064nm; <1%/cm @532nm

Angle Acceptance

0.8 mrad·cm-1 (θ, Type I, 1064 SHG)
1.27 mrad·cm-1 (θ, Type II, 1064 SHG)

Temperature Acceptance

55 ℃·cm-1

Spectral Acceptance

1.1 nm·cm-1

Walk-off Angle

2.7° (Type I, 1064 SHG); 3.2° (Type II, 1064 SHG)

NLO Coefficients

deff (I)=d31sinθ+(d11cosΦ-d22sin3Φ)cosθ
deff (II)=(d11sin3Φ+d22cos3Φ)cos2θ

Non-vanished NLO Susceptibilities

d11=5.8×d36 (KDP); d31=0.05×d11; d22<0.05×d11

Sellmeier Equations (λ in μm )

no2=2.7359+0.01878 / (λ2-0.01822) -0.01354 λ2
ne2=2.3753+0.01224 / (λ2-0.01667) -0.01516 λ2

Electro-optic Coefficients

r22=2.7 pm/V

Half-wave Voltage

7 kV (@1064 nm, 3×3×20 mm3)

Resistivity

>1011 Ω·cm

Relative Dielectric Constant

εs11/εo:6.7; εs33/εo:8.1; Tan δ<0.001