We are professional manufacturer of Epi-Ready Sapphire wafers,GaAs wafers, Ge wafers and InP wafers.Our headquarters is located in USA and our production facility is located in ShenZhen of China.With reliable quality and competitive price,our products sell well in both domestic and oversea market. 

We are producing：

Epistone epi-ready wafer typical spec summary

a). C-plane 0.2⁰ or 0.3⁰ off to M

Crystal Materials    High purity, Monocrystalline Al₂O₃

Surface Orientation  C[0001] off M [1-100] 0.2⁰ ± 0.1⁰(target ± 0.05⁰) / 0.3⁰ ± 0.1⁰

Diameter          50.8mm ± 0.1mm

Thickness          430um ± 10um

Major Flat         A [11-20] ± 0.5°

Major Flat Length    16.0mm ± 1.0mm

Front Surface Finish  Epi-ready polished, Ra< 0.2 nm

Back Surface       SSP:  Fine ground, Ra 0.4 to 1.0 um;     DSP:  Epi polished

Edge condition      Edge defects not to exceed SEMI M3-91

Flatness           TTV<10um,           BOW <10um,               Warp<10um         

b). R-plane ±0.1⁰

Crystal Materials    High purity, Monocrystalline Al₂O₃

Surface Orientation      R[1-102] ± 0.1⁰

Diameter          50.8mm ± 0.1mm

Thickness          430um ± 10um

Major Flat         45°± 2° counter-clockwise from the projection of the C-axis onto the R-plane

Major Flat Length    16.0mm ± 1.0mm

Front Surface Finish  Epi-ready polished, Ra< 0.3 nm

Back Surface       SSP:  Fine ground, Ra 0.4 to 1.0 um

Edge condition      Edge defects not to exceed SEMI M3-91

Flatness           TTV<10um,           BOW <10um,               Warp<10um         

c). A-plane ±0.1⁰

Crystal Materials    High purity, Monocrystalline Al₂O₃

Surface Orientation      A [11-20] ± 0.1⁰

Diameter          50.8mm ± 0.1mm

Thickness          430um ± 10um

Major Flat         C [0001] ± 0.5°

Major Flat Length    16.0mm ± 1.0mm

Front Surface Finish  Epi-ready polished, Ra< 0.3 nm

Back Surface       SSP:  Fine ground, Ra 0.4 to 1.0 um

Edge condition      Edge defects not to exceed SEMI M3-91

Flatness           TTV<10um,           BOW <10um,               Warp<10um         

C-plane, R-plane and A-plane Packaging

 Packaged in a class 100 clean room environment, in single fluroware (samples) or cassettes of

 25pcs (for official order) under a nitrogen atmosphere

1、2" , 3" , 4"  Epi-ready Sahhpire wafers with 200/330/430/500um thickness.

2、2" , 3" , 4", 6" Epi-ready GaAs wafers with 325um to 675um thichness.

3、2" , 3" , 4" Epi-ready Ge wafers with 325/500um thickness.

4、2" , 3" , 4" Epi-ready InP wafers with 325/425um thickness.

5、All wafer specifications are adjustable to meet customers' special requirements.

6、Wafers Reclaim Service. 

With our unique technology,the TTV、BOW and WARP of our wafers are all be controlled under 10um.The Ra of polished side can be controlled under 0.2nm.