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Transition metal oxides (TMOs) are often used in organic electronic devices due to their excellent hole injection characteristics, by acting as a p-dopant.  MoO3, V2O5, WO3 have been shown to reduce the energy offset between electrode and organic materials by acting as a surface modification layer, or electrode buffer layer.

1.) Oxide sputtering target:        
CeO2, Nd2O3, Sm2O3, Eu2O3, Gd2O3, Tb4O7, Dy2O3, Ho2O3, Er2O3, Tm2O3, Yb2O3, Lu2O3, Sc2O3, Y2O3    
Ta2O5, Ta2Ox, Nb2O5, Nb2Ox Ga2O3, V2O5, VO2, ZrO2 doped with Ti, WO3, WO2.9, HfO2, MgO, Al2O3, In2O3, Indium Tin Oxide, ITO (In2O3-SnO2), In2O3/CaO, ZnO, Al2O3 doped ZnO (AZO), IZO (Indium Zinc Oxide, 90 wt% In2O3 / 10 wt% ZnO), In2O3/CaO ICO, Li2O/ZnO LZO, Ga2O3 doped ZnO (GZO), IGZO, ZnO2/TiO2, ZnO2/ZrO2, ZnO/LiCl, La0.67Sr0.33MnO3 (LSMO), ZrO2-Y2O3 stabilized (YSZ), SnO2, Sb2O3 doped SnO2 (ATO), SnO2/F FTO, ZrO2+Ti, ZrO2+Zr, ZrO2+SiO2, Bi2O3, Cr2O3, MoO, MoO3, NiO, SiO, Cr-SiO, SiO2, TiO, TiO2, VO2, V2O5, TiO2-Nb2O5, Ti2O3, Ti3O5, CuO/Al2O3, Sb2O3, BaO, BaTiO3, CaO, Fe2O3, Fe3O4, PbO, PbTiO3, PbZrO3, LiNbO3, SrO, SrTiO3, SrRuO3, BaTiO3, SrZrO3, BaZrO3, SrBaTiO3, PZT (Plumbum Zirconate Titanate), LaNiO3, InGaZnO, CuInO2, LaAl2O3, CGO, Y3Fe5O12, Tm3Fe5O12, HfO2, ZrO2, LiCoO2, Li3PO4, Cd2SnO4, BiFeO3, Yb2Hf2O7, Yb6HfO11, Yb4Hf3O12, Yb2SiO5

2.) (Boride, Carbide, Nitride, Fluoride, Silicide, Silicate, Sulfide, Telluride, stannate) sputtering target         
LaB6, SmB6, GdB6, ZrB2, CrB2, TiB2, HfB2, Mo2B5, TaB2, NbB2, W2B, WB, VB2, TiB, Boron         
TiC, SiC, WC, WC-Co, WC-Ni, B4C, TaC, NbC, Cr3C2, HfC, Mo2C, VC, ZrC, Cr/Si/SiC, CrB2/SiC, Fe3C, Co2C         
Si3N4, AlN, BN, BN/SiC mixture, CrN, HfN, TaN, NbN, ZrN, TiN, VN         
LaF3, CeF3, NdF3, YF3, NaF, KF, BaF2, AlF3, LiF, CaF2, SrF3, SrF2, MgF2         
CoSi2, Mo5Si3, MoSi2, Ta5Si3, TaSi2, TaSi, WSi2, WSi, Nb5Si3, NbSi2, CrSi2, Cr3Si, HfSi2, TiSi2, ZrSi2, HfSiO4, Ti5Si3, ZrSi2, WSi2, VSi2, V3Si, NiSi, YSi2, GeSi, HfSiO4, ZrSiO4         
CdS, ZnS, Cu2S, ZnS:Mn, In2S3, Sb2S3, PbS, MoS2, CZTS, MoS2/Ti, MoS2/nI, SnS2, TaS2, WS2, In2S3, GeS2, Ag2S,Y2S3         
GeSe, GeSe2, GeSe4, GeSe6, CuSe, Cu2Se, SnSe, SeSe2, ZnSe, Bi2Se3, WSe2, As2Se3          
Zn2SnO4, Cd2SnO4, CdTe, ZnTe, Bi2Te3, In2Te3, ZnSe, As2Te3, GeAs3Te5, GaAs, InAs         
GeTe, CdTe, PbTe, Bi2Te3, Ge2Sb2Te5 

3.) Metal sputtering target:         
Silver, Ag, Iridium, Ir, Ruthenium, Ru, Palladium Pd, Lanthanum La, Cerium Ce, Praseodymium Pr, Neodymium Nd, Samarium Sm, Eur , Eu, Gadolinium Gd, Terbium Tb, Dysprosium Dy, Holmium Ho, Erbium Er, Thulium Tm, Ytterbium Yb, Lutetium Lu, Scandium Sc, Yttrium Y, Silicon, Si, Tellurium, Te, Bismuth, Bi, Tin, Sn, Zinc, Zn, Boron, B, Lead, Pb, Antimony, Sb, Chromium, Cr, Cobalt, Co, Aluminum, Al, Nickel, Ni, Titanium, Ti, Tungsten, W, Molybdenum, Mo, Tantalum, Ta, Niobium, Nb, Zirconium, Zr, Hafnium, Hf, Vanadium, V, Germanium, Ge, Indium In, Copper, Cu, Iron, Fe, Manganese, Mn, Magnesium, Mg, Cadmium Cd, etc. 

4.) Alloy sputtering target:         
Ag-Al, Ag-Cu, Ag-La, Ag-Lu, Ag-Mg, Al-Sm, Ag-Sn, Al-Ag, Al-Cr, Al-Cu, Al-Dy, Al-Er, Al-Gd, Al-Mg, Al-Mg-Si, Al-Sc, Al-Si, Al-Si-Cu, Al-Sm, Al-Ta, Al-Ti, Al-Mo, Al-Nd, Al-V, Al-Y, Al-Yb  Cd-Sn, Ce-Ag, Ce-Cu, Ce-Gd, Ce-Sm, Ce-Ti, Co-Al, Co-B, Co-Cr, Co-Cr-Al, Co-Cr-Fe, Co-Fe, Co-Fe-B, Co-Fe-Gd, Co-Gd, Co-Ni, Co-Ni-Cr, Co-Tb, Co-V, Co-Zr, Cr-Al, Cr-B, Cr-Cu, Cr-Mn, Cr-Ni, Cr-Si, Cr-V, Cu-Al, Cu-Ga, Cu-Ge, Cu-In, Cu-Ni, Cu-Zn  Dy-Fe, Dy-Co, Dy-Fe-Co, Fe-Al, Fe-B, Fe-Co, Fe-Gd, Fe-Hf, Fe-Mn, Fe-Ni, Fe-Si, Gd-Ce, Gd-Fe, Gd-Fe-Co, Gd-Er-Si, Gd-Tb, Gd-Ti  Ho-Cu, Hf-Fe, Hf-Y, In-Sb, In-Sn, In-Zn  LaB6, La-Al, La-Ni, Mg-Al, Mg-Ca, Mg-Dy, Mg-Gd, Mg-In, Mg-Nd, Mg-Nd-Zr-Y, Mg-Sc, Mg-Sm, Mg-Y, Mg-Zr, Mn-Fe, Mn-Ni, Mo-Cr  Ta-Mo, Mo-Si, Nb-Ti, Nd-Ag, Nd-Fe-B, Ni-Al, Ni-Cu, Ni-Cr, Ni-Cr-Al, Ni-Cr-Si, Ni-Fe, Ni-Mn, Ni-Ti, Ni-W, Ni-V, Ni-V-Zr, Ni-Yb, Ni2Yb, Ni3Yb, Ni-Yb, Ni-Zr  Sc-Ni, Sc-Zr, Sm-Co, Sm-Fe, Sm-Zr, Ta-Al, Ti-Al, Ti-Al-Cr, Ti-Al-Y, Ti-Al-V, Ti-Co, Ti-Cr, Ti-Ni, Ti-Si, TiSi2, Ti-Zr, Tb-Dy, Tb-Dy-Fe, Tb-Fe, Tb-Fe-Co, Tb-Gd-Fe-Co  V-Al, V-Co, V-Cr, V-Cu, V-Fe, V-Mo, V-Ni, V-Ti, Ti-Al-V, W-Ti, W-Si, Y-Ti, Y-Zr, Y-Zr-Mg  Zn-Al, Zr-Al, Zr-Ce, Zr-Cu, Zr-Gd, Zr-Si, Zr-Ti, Zr-Y, W/Re/HfC, TiAl6V4, Co2MnSi, InSb, Co2MnSi, Nb3Sn 

5.) Thin film photovoltaic coating materials         
Cadmium Sulfide CdS, Copper Sulphide CuS, Cadmium Telluride CdTe, Lead Telluride PbTe, Mercury Telluride HgTe, Indium Telluride In2Te3, Antimony Telluride Sb2Te3, Bismuth Telluride  Bi2Te3, Gallium Telluride Ga2Te3, Tin Telluride SnTe  Zinc Telluride ZnTe, CuInGaSe, In2Se3, Ga2Se3, CuInSe2, CuInS2, Zinc Stannate (Zn2SnO4), Cadmium Stannate (Cd2SnO4), SnO2, SnCl4, ZnO, Molybdenum, Indium, ZnS, ZnSe, InSb, InAs, In2S3, CuGa, Cu2S, Cu2Se. 

Lanthanum Hexaboride (LaB6) products:          
Used as a high brightness thermionic emission materials because of its low work function, high melting point and high metallic conductivity. LaB6 cathode for Leybold 1104 coating machines for precision optical coating is our advantage.   We produce LaB6 powder, LaB6 disc, LaB6 tablet, LaB6 target, LaB6 rod, LaB6 crucible, LaB6 sector ring, LaB6 tube (hollow cathode), YB6 rod, CeB6, PrB6, NdB6, SmB6, EuB6, GdB6, TbB6, DyB6, HoB6, ErB6, TmB6, YbB6, LuB6, ScB6, (LaBa)B6, (LaEu)B6, CaB6, etc.