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Cadmium Telluride (CdTe) 

1,Purity :99.999% or 5N;

2,Process :THM for CSS,VTD process to produce CdTe thin-film ;

3,Analysis :ICP-MS or GDMS (All impurity elements is below 10ppm;);LPSA;XRD;

4,Particle Size :Powder:-120mesh/+60Mesh;Granule:1-6mm;(or customize),Tabelt;

5,Service :Supply MSDS; Free sample; Solutions for material application;

6,Packing :Vacuum packing or Argon shield;

7,Application: CdTe thin-film solar cells ;CZT; HgxCd1-xTe;

8,Payment term : T/T 30days after customer approval;

9,Physical character: 

Molecular mass: 240.01

Band gap: 1.44 eV

Refractive index: 2.57

Density: ρ=5.85 g•cm−3

Melting Point: 1092℃ 

Boiling Point: 1130℃;

10, Specification: 

Cadmium telluride: 

CdTe-05 Grade 99.999. The content of Cadmium Telluride is above 99.999%. The total content of Ag, Al, As, Bi, Cu, Fe, Mg, Ni, Pb, Se, Si & Zn is bellow 10 ppm; 

CdTe-06 Grade 99.9999. The content of Cadmium Telluride is above 99.9999%. The total content of Ag, Al, As, Bi, Cu, Fe, Mg, Ni, Pb, Se, Si & Zn is bellow 1ppm; 

3, Physical Size: 

Lump, Powder.

4, Usage: 

It is mainly used in the manufacture of solar cells, infrared modulators, HgxCd1-xTe underlay, infrared electroluminescence electric eye, infrared detectors, X-ray detectors, nuclear radio activity detectors, approach visible light radiation etc.