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Item Spec
Crystal structure Mono-crystalline
Crystal method CZ
Conductance Type P
Dopant B
dimension 125*125±0.4 125*125±0.4
Diameter Φ150±0.4 Φ165±0.4
Wafer thickness range 190/200±20μm 190/200±20μm
Crystal orientation <100>±1 <100>±1
Resistivity( Ω.cm) 1-3/3-6 1-3/3-6
Lifetime( μs) ≥15 ≥15
Carbon concentration( atoms/cm3 ) ≤5*1016 ≤5*1016
Oxygen concentration( atoms/cm3 ) ≤0.95*1018 ≤0.95*1018
Etching Pit( pcs/cm3 ) ≤2000 ≤2000
TTV ≤30μm ≤30μm
Camber ≤30μm ≤30μm
Saw mark ≤15μm(depth) ≤15μm(depth)
Wafer surface No crack, obvious pits, surface clean, no abnormal spots no pinholes.
Gap No
Edge defect Edge defect width≤0.2mm,extention≤0.5mm with total quantity≤2,,distance≥30mm
Luminance edge Length≤1/2 of wafer dimension, width≤1/3 of wafer thickness