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    Laser crystal Nd:YVO4

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    Category:Electronics & Electricity / Electronic Components / Other Electronic Components
    Label:Laser crystal , Nd:YVO4
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    FuZhou CrysBase photonics,Inc

    Free MemberFu Jian - China
    Live Chat:Last Online:31 Aug, 2009

    Product Description

    Nd:YVO4 is one of the most efficient laser host crystal currently existing for diode laser-pumped solid-state lasers. Its large stimulated emission cross-section at lasing wavelength, high absorption coefficient and wide absorption bandwidth at pump wavelength, high laser induced damage threshold as well as good physical, optical and mechanical properties make Nd:YVO4 an excellent crystal for high power, stable and cost-effective diode pumped solid-state lasers.


    Capabilities:
    Nd dopant: 0.27%, 0.3%, 0.4%, 0.5%, 0.7%, 1.0%, 2.0%, 3.0%
    Width x Height: 1x1 ~ 16x16mm
    Length: 0.02 ~ 20mm

    Specifications:
    Orientation: a-cut( ± 0.5° )
    Dimensional Tolerance: +/-0.1mm
    Wavefront Distortion: <λ/8 at 633nm
    Surface Quality: 20/10
    Parallelism: < 10 arc seconds
    Perpendicularity: < 5 arc minutes
    Surface Flatness: <λ/10 at 632.8nm
    Clear Aperture: Central 95%
    Chamfer: 0.15x45°
    Coating: 1.AR@1064nm R<0.1%
    2.AR@1064nm R< 0.1% & HT@808nm T>95%
    3.HR@1064nm R>99.8% & HR@532nm R>99% & HT@808nm T>95%

    Properties:
    Atomic Density ~1.37x1020 atoms/cm2
    Crystal Structure Zircon Tetragonal, space group D4h, a=b=7.12, c=6.29
    Density 4.22 g/cm3
    Mohs Hardness Glass-like, ~5
    Thermal Expansion Coefficient aa=4.43x10-6/K, ac=11.37x10-6/K
    Thermal Conductivity Coefficient ||C: 5.23 W/m/K; ^C: 5.10 W/m/K

    Lasing Wavelengths 914nm, 1064 nm, 1342 nm
    Crystal Class positive uniaxial, no=na=nb ne=nc
    no=1.9573, ne=2.1652, @ 1064nm
    no=1.9721, ne=2.1858, @ 808nm
    no=2.0210, ne=2.2560, @ 532nm
    Thermal Optical Coefficient dna/dT=8.5x10-6/K, dnc/dT=3.0x10-6/K
    Stimulated Emission Cross-Section 25.0x10-19 cm2 , @1064 nm
    Fluorescent Lifetime 90 ms (about 50 ms for 2 atm% Nd doped) @ 808 nm
    Absorption Coefficient 31.4 cm-1 @ 808 nm
    Absorption Length 0.32 mm @ 808 nm
    Intrinsic Loss Less 0.1% cm-1 , @1064 nm
    Gain Bandwidth 0.96 nm (257 GHz) @ 1064 nm
    Polarized Laser Emission p parallel to optic axis (c-axis)
    Diode Pumped Optical to Optical Efficiency > 60%

    Sellmeier Equation (for pure YVO4 crystals)

    no2=3.77834+0.069736/(l2 - 0.04724) - 0.0108133l2
    no2=4.59905+0.110534/(l2 - 0.04813) - 0.0122676l2 
     

    Send Inquiry to this Member

    FuZhou CrysBase photonics,Inc

    19# Bldg jinshan pushang Industrial park D zone,Fuzhou,Fujian,P.R.China

    Phone:
    86-0591-88190800-808
    Fax:
    86-0591-88190655
    Contact:
    hunter.li (Marketing manager)
    Mobile:
    86-591-88190800-808
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