| Model: | - |
|---|---|
| Brand: | Spark |
| Origin: | Made In China |
| Category: | Electronics & Electricity / Electronic Components / Other Electronic Components |
| Label: | - |
| Price: |
US $20
/ pc
|
| Min. Order: | 1 pc |
| Live Chat: | Last Online:16 Aug, 2022 |
Silicon Carbide Heating ElementDescription
Silicon Carbide Heating Element can be installed and replaced while the tin bath is operation. The heaters can be installed through the side-seal, or through the side of the bath roof, and are commonly used to extend campaign lives, where conventional elements in the side zones have been broken, and insufficient power is available.
Silicon Carbide Heating Element Advantages
High purity raw materials;
High structural density;
Slow aging;
Maximum temperature being up to 1500℃ (2732°F);
Easy to be installed and replaced.
Physical property of SIC heating element
| specific gravity | 2.6~2.8g/cm³ | bend strength | >300kg |
| hardness | >9MOH’S | tensile strength | >150kg/cm³ |
| porosity rate | <30% | radiance | 0.85 |
Recommended surface load and Influences to Surfaces of the Elements in Different Operating TemperatureS
| atmosphere | Furnace Temperature(°C) | Surface Load(W/cm2) | The influence on the Rod |
| Ammonia | 1290 | 3.8 | The action on SiC produces methane and destroys the protection film of SiO2 |
| Carbon dioxide | 1450 | 3.1 | Corrode SiC |
| Carbon monoxide | 1370 | 3.8 | Absorb carbon powder and influence the protection film of SiO2 |
| Halogen | 704 | 3.8 | Corrode SiC and destroy the protection film of SiO2 |
| Hydrogen | 1290 | 3.1 | The action on SiC produces methane and destroys the protection film of SiO2 |
| Nitrogen | 1370 | 3.1 | The action on SiC produces insulating layer of silicon nitride |
| Sodium | 1310 | 3.8 | Corrode SiC |
| silicon dioxide | 1310 | 3.8 | Corrode SiC |
| Oxygen | 1310 | 3.8 | SiC oxidized |
| Water-vapor | 1090-1370 | 3.1-3.6 | The action on SiC produces hydrate of silicon |
| Hydrocarbon | 1370 | 3.1 | Absorb carbon powder resulted in Hot pollution
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