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Dual high power IGBT drive 1
  • Dual high power IGBT drive 1

Dual high power IGBT drive

Model:2DI 615
Brand:power-sem
Origin:Made In China
Category:Electronics & Electricity / Electronic Components / Other Electronic Components
Label:IGBT driver , IGBT driver circuit , IGBT driver board
Price: -
Min. Order:1 pc
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Member Information

Detail

BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.

Free MemberBeijing - China
Live Chat:
点击这里给我发消息Last Online:28 Dec, 2017

Product Description

2DI 615 Dual high power IGBT driver
2DI 615T SMT dual high power IGBT driver
2DI 615M Dual SiC IGBT driver

 

Absolute Maximum Ratings (Ta=25)

Max. supply voltage primary +16 V

Max. supply current primary 430 mA

Total power of DC/DC isolation power output 6 W

Output average current per channel 120 mA

Output peak current per channel ±15 A

Isolation voltage (1 minute. AC) 5000 V

Minimal Rgon/Rgoff  1.6 Ω

Charge per pulse ±10 μC

Rate of rise and fall of voltage 75 kV/μs

Max. working frequency 100 kHz

Operating temperature  -40...+80

Storage temperatature -45...+85

 

Electrical Characteristics (Ta=25)

Supply voltage primary +15V

No-load current primary fSW=095 mA

Turn-on gate voltage +15V

Turn-off gate voltage -9V

IN-OUT turn-on delay time 300ns

IN-OUT turn-off delay time 300ns

 

Drive capability

35kHz is suitable for FF300R12KS4

15kHz is suitable for FF600R17ME4

 


Product Image

Dual high power IGBT drive 1
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Send Inquiry to this Member

BEIJING POWER-SEM ELECTRONIC TECHNIQUE CO. LTD.

1/F, No.23 Huoju Street, ChangpingPark, Beijing, China,102200

Phone:
+86-13521775103
Fax:
86-010-6971 1385
Contact:
Alice lau ( manager)
Mobile:
15811051473

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