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Memory Type: DDR3

Memory Speed: 1066/1333/1600MHz DDR3

Memory Size: 1GB,2GB/4GB/8GB

Memory Channels: Dual

Memory Socket: SO DIMM

Memory CAS Latency: 4-4-4-12

Memory Timing:4-4-4-12

Pins: 200

Voltage:1.5V

Function: Non ECC Memory

Chip: Original chips.(brand new )

Warranty:Life time

Detail Description:

1) DDR 400/333 & DDRII 533/667/800 & DDR3/1066/1333/1600 MHz.
2) 168/184/240-pin socket type dual in line memory module (DIMM) .
3) 2.6V power supply
4) Data rate: 400/333/533/667/800M1066/1333MHZ/1600mhz (max). 
5) 2.5 V (SSTL-2 compatible) I/O for DDR I products, 1.8Vpower supply for DDR II products 
6) Double-data-rate architecture, two data transfers per clock cycle. 
7) Bi-directional, differential data strobe (DQS) is transmitted/received with data, to be

 used in capturing data at the receiver
8) Data inputs and outputs are synchronzed with DQS.
9) DQS is edge aligned with data for read, center aligned with data for write.
10) Differential clock inputs (CK and CK).
11) DLL aligns DQ and DQS transitions with CK transitions
12) Commands entered on each positive CK edge: Data and data mask referenced to both edges of DQS.
13) Four internal banks for concurrent operation (component). 
14) Data mask(DM) for write data. 
15) Auto precharge option for each burst access
16) Programmable burst length: 2, 4, 8 
17) Programmable/CAS latency (CL): 3 
18) Programmable output driver strength: Normal/weak 
19) Refresh cycles: (8192 refresh cycles/64ms) .
20) 7.8US maximum average periodic refresh interval.
21) Posted CAS by programmable additive latency for better command and data bus efficiency 
22) Off-chip-driver impedance adjustment and on-die-termination for better signal quality .
23) DQS can be disabled for single-ended data strobe operation 
24) 2 variations of refresh