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1GB 2GB 4GB 8GB DDR RAM memory module DDR&DDR2&DDR3 2GB Memory RAM  11GB 2GB 4GB 8GB DDR RAM memory module DDR&DDR2&DDR3 2GB Memory RAM  21GB 2GB 4GB 8GB DDR RAM memory module DDR&DDR2&DDR3 2GB Memory RAM  31GB 2GB 4GB 8GB DDR RAM memory module DDR&DDR2&DDR3 2GB Memory RAM  4
  • 1GB 2GB 4GB 8GB DDR RAM memory module DDR&DDR2&DDR3 2GB Memory RAM  1
  • 1GB 2GB 4GB 8GB DDR RAM memory module DDR&DDR2&DDR3 2GB Memory RAM  2
  • 1GB 2GB 4GB 8GB DDR RAM memory module DDR&DDR2&DDR3 2GB Memory RAM  3
  • 1GB 2GB 4GB 8GB DDR RAM memory module DDR&DDR2&DDR3 2GB Memory RAM  4

1GB 2GB 4GB 8GB DDR RAM memory module DDR&DDR2&DDR3 2GB Memory RAM

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Category:Computers & AV Digital / Computer Components / Memory
Label:1GB 2GB 4GB 8GB RAM , DDR3 2GB Memory RAM , RAM Memory module
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Detail

Yue Gao Computer Accessories Co., Ltd

Free MemberGuang Dong - China
Live Chat:Last Online:22 Sep, 2013

Product Description

1GB 2GB 4GB 8GB DDR RAM memory module DDR&DDR2&DDR3 2GB Memory RAM

Product Description
RAM Memory / Memory Module / DDR Memory DDR3 RAM
DDR1, DDR2, DDR3 RAM
Desktop Computer, laptop computer
128MB/256MB/512MB/1G/2G/4GB/8GB

1) DDR 400/333 & DDRII 533/667/800/1333/1600 MHz
2) 168/184/240-pin socket type dual in line memory module (DIMM)
3) 2.6V power supply
4) Data rate: 400/333/533/667/800Mbps (max. )
5) 2.5 V (SSTL-2 compatible) I/O for DDR I products, 1.8Vpower supply for DDR II products
6) Double-data-rate architecture, two data transfers per clock cycle
7) Bi-directional, differential data strobe (DQS) is transmitted/received with data, to be used in capturing data at the receiver
8) Data inputs and outputs are synchronized with DQS
9) DQS is edge aligned with data for read, center aligned with data for write
10) Differential clock inputs (CK and CK)
11) DLL aligns DQ and DQS transitions with CK transitions
12) Commands entered on each positive CK edge: Data and data mask referenced to both edges of DQS
13) Four internal banks for concurrent operation (component)
14) Data mask(DM) for write data
15) Auto precharge option for each burst access
16) Programmable burst length: 2, 4, 8
17) Programmable/CAS latency (CL): 3
18) Programmable output driver strength: Normal/weak
19) Refresh cycles: (8192 refresh cycles/64ms)
20) 7.8US maximum average periodic refresh interval
21) Posted CAS by programmable additive latency for better command and data bus efficiency
22) Off-chip-driver impedance adjustment and on-die-termination for better signal quality
23) DQS can be disabled for single-ended data strobe operation
24) 2 variations of refresh
25) Auto refresh
26) Self refresh


Product Image

1GB 2GB 4GB 8GB DDR RAM memory module DDR&DDR2&DDR3 2GB Memory RAM  1
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1GB 2GB 4GB 8GB DDR RAM memory module DDR&DDR2&DDR3 2GB Memory RAM  4
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Send Inquiry to this Member

Yue Gao Computer Accessories Co., Ltd

shen nan road day Shenzhen

Phone:
86-755-36641248
Fax:
86
Contact:
Luo (Manager)
Mobile:
36641248

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