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Code

Item

specification

1

Material

Metallization solar grade silicon

2

Growing Method

CZ

3

Type

P

4

Crystal Orientation

<100>±2°

5

Resistivity（Ω.cm）

I：0.1~0.3

II：0.3~0.5

III: 0.5~3

6

Oxygen Content

≤1.0×1018 atoms/cm3

7

Carbon Content

≤5.0×1017 atoms/cm3

8

lifetime

≥1.5μs

9

Etch Pit Defects

≤3000/cm2

10

Dimension

wafer thickness & thickness variation (TV)

200±20μm；

wafer side length & side length tolerant variation

125±0.5mm

diagonal（diameter）& diagonal（diameter）variation

150±0.5 mm

angularity≤50μm

total thickness variation(TTV)：＜30μm

11

Surface quality

surface gaps width≤0.5mm，surface gaps’ quantity per pc≤2C，surface gaps range less than 3mm

no cracks, no holes ,“V” shape gaps are not allowed

surface damage layer(saw traces)≤15μm，the handle is not marked

Clean and free from staining, free from scratches and cracks.